TJ60S04M3L(T6L1,NQ Praghsáil (USD) [117194pcs Stoc]
- 1 pcs$0.33644
- 2,000 pcs$0.33477
- Cuid Uimhir:
- TJ60S04M3L(T6L1,NQ
- Monaróir:
- Toshiba Semiconductor and Storage
- Cur síos mionsonraithe:
- MOSFET P-CH 40V 60A DPAK-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - RF, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Zener - Sraith, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Modúil Tiomána Cumhachta and Diodes - Toilleadh Athrógach (Varicaps, Varactors) ...
- Buntáiste iomaíoch:
- We specialize in Toshiba Semiconductor and Storage TJ60S04M3L(T6L1,NQ electronic components. TJ60S04M3L(T6L1,NQ can be shipped within 24 hours after order. If you have any demands for TJ60S04M3L(T6L1,NQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TJ60S04M3L(T6L1,NQ Tréithe Táirge
Cuid Uimhir :
TJ60S04M3L(T6L1,NQ
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET P-CH 40V 60A DPAK-3
Sraith :
U-MOSVI
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
40V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
60A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
6V, 10V
Rds On (Max) @ Id, Vgs :
6.3 mOhm @ 30A, 10V
Vgs (ú) (Max) @ Id :
3V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
125nC @ 10V
Vgs (Max) :
+10V, -20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
6510pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
90W (Tc)
Teocht Oibriúcháin :
175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
DPAK+
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
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