IPD80R2K8CEATMA1 Praghsáil (USD) [198305pcs Stoc]
- 1 pcs$0.18652
- 2,500 pcs$0.15227
- Cuid Uimhir:
- IPD80R2K8CEATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 800V 1.9A TO252-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - Rectifiers - Eagair, Trasraitheoirí - FETs, MOSFETs - Eagair, Trasraitheoirí - IGBTanna - Aonair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Aonair and Túistéirí - TRIACanna ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPD80R2K8CEATMA1 electronic components. IPD80R2K8CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R2K8CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD80R2K8CEATMA1 Tréithe Táirge
Cuid Uimhir :
IPD80R2K8CEATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 800V 1.9A TO252-3
Sraith :
CoolMOS™ CE
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
800V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1.9A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
2.8 Ohm @ 1.1A, 10V
Vgs (ú) (Max) @ Id :
3.9V @ 120µA
Muirear Geata (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
290pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
42W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TO252-3
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
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