Cur síos :
MOSFET 4N-CH 200V 10A 12SIP
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
200V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
10A
Rds On (Max) @ Id, Vgs :
175 mOhm @ 5A, 10V
Vgs (ú) (Max) @ Id :
4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
-
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
850pF @ 10V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
12-SIP w/fin