Nexperia USA Inc. - PSMN3R3-80BS,118

KEY Part #: K6416517

PSMN3R3-80BS,118 Praghsáil (USD) [73710pcs Stoc]

  • 1 pcs$0.53311
  • 800 pcs$0.53046

Cuid Uimhir:
PSMN3R3-80BS,118
Monaróir:
Nexperia USA Inc.
Cur síos mionsonraithe:
MOSFET N-CH 80V 120A D2PAK.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Thyristors - SCRanna, Diodes - Rectifiers - Aonair, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - IGBTanna - Eagair, Transistors - Bipolar (BJT) - Aonair and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN3R3-80BS,118 Tréithe Táirge

Cuid Uimhir : PSMN3R3-80BS,118
Monaróir : Nexperia USA Inc.
Cur síos : MOSFET N-CH 80V 120A D2PAK
Sraith : -
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 80V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 120A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 3.5 mOhm @ 25A, 10V
Vgs (ú) (Max) @ Id : 4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs : 111nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 8161pF @ 40V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 306W (Tc)
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : D2PAK
Pacáiste / Cás : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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