Cuid Uimhir :
APTMC120HR11CT3AG
Monaróir :
Microsemi Corporation
Cur síos :
POWER MODULE - SIC MOSFET
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Silicon Carbide (SiC)
Drain to Voltage Source (Vdss) :
1200V (1.2kV)
Reatha - Leanúnach Drain (Id) @ 25 ° C :
26A (Tc)
Rds On (Max) @ Id, Vgs :
98 mOhm @ 20A, 20V
Vgs (ú) (Max) @ Id :
3V @ 5mA
Muirear Geata (Qg) (Max) @ Vgs :
62nC @ 20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
950pF @ 1000V
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Chassis Mount
Pacáiste Gléas Soláthraithe :
SP3