BSZ0910NDXTMA1 Praghsáil (USD) [171885pcs Stoc]
- 1 pcs$0.21519
- Cuid Uimhir:
- BSZ0910NDXTMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- DIFFERENTIATED MOSFETS.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - JFETanna, Trasraitheoirí - Cuspóir Speisialta, Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Zener - Aonair, Diodes - Rectifiers - Aonair and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSZ0910NDXTMA1 electronic components. BSZ0910NDXTMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0910NDXTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0910NDXTMA1 Tréithe Táirge
Cuid Uimhir :
BSZ0910NDXTMA1
Monaróir :
Infineon Technologies
Cur síos :
DIFFERENTIATED MOSFETS
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate, 4.5V Drive
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 9A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
5.6nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
800pF @ 15V
Cumhacht - Max :
1.9W (Ta), 31W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-PowerVDFN
Pacáiste Gléas Soláthraithe :
PG-WISON-8
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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