Infineon Technologies - IPA100N08N3GXKSA1

KEY Part #: K6418946

IPA100N08N3GXKSA1 Praghsáil (USD) [84110pcs Stoc]

  • 1 pcs$0.46488
  • 500 pcs$0.42649

Cuid Uimhir:
IPA100N08N3GXKSA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 80V 40A TO220-3.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Thyristors - SCRanna, Trasraitheoirí - FETs, MOSFETs - Eagair, Trasraitheoirí - IGBTanna - Aonair, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Eagair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Trasraitheoirí - JFETanna and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA100N08N3GXKSA1 Tréithe Táirge

Cuid Uimhir : IPA100N08N3GXKSA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 80V 40A TO220-3
Sraith : OptiMOS™
Stádas Cuid : Not For New Designs
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 80V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 40A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 6V, 10V
Rds On (Max) @ Id, Vgs : 10 mOhm @ 40A, 10V
Vgs (ú) (Max) @ Id : 3.5V @ 46µA
Muirear Geata (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 2410pF @ 40V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 35W (Tc)
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : PG-TO220-FP
Pacáiste / Cás : TO-220-3 Full Pack

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