[3990pcs Stoc]
- Cuid Uimhir:
- SI7983DP-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2P-CH 20V 7.7A PPAK SO-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Cuspóir Speisialta, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - FETs, MOSFETs - Eagair, Diodes - Rectifiers - Aonair, Diodes - Rectifiers - Eagair, Thyristors - SCRanna and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI7983DP-T1-GE3 electronic components. SI7983DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7983DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7983DP-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI7983DP-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2P-CH 20V 7.7A PPAK SO-8
Sraith :
TrenchFET®
Stádas Cuid :
Obsolete
Cineál FET :
2 P-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
7.7A
Rds On (Max) @ Id, Vgs :
17 mOhm @ 12A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 600µA
Muirear Geata (Qg) (Max) @ Vgs :
74nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Cumhacht - Max :
1.4W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
PowerPAK® SO-8 Dual
Pacáiste Gléas Soláthraithe :
PowerPAK® SO-8 Dual
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