Cuid Uimhir :
IPD65R660CFDAATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH TO252-3
Sraith :
Automotive, AEC-Q101, CoolMOS™
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
660 mOhm @ 3.22A, 10V
Vgs (ú) (Max) @ Id :
4.5V @ 214.55µA
Muirear Geata (Qg) (Max) @ Vgs :
20nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
543pF @ 100V
Díscaoileadh Cumhachta (Max) :
62.5W (Tc)
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TO252-3
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63