Cuid Uimhir :
APTM100H35FTG
Monaróir :
Microsemi Corporation
Cur síos :
MOSFET 4N-CH 1000V 22A SP4
Cineál FET :
4 N-Channel (H-Bridge)
Drain to Voltage Source (Vdss) :
1000V (1kV)
Reatha - Leanúnach Drain (Id) @ 25 ° C :
22A
Rds On (Max) @ Id, Vgs :
420 mOhm @ 11A, 10V
Vgs (ú) (Max) @ Id :
5V @ 2.5mA
Muirear Geata (Qg) (Max) @ Vgs :
186nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
5200pF @ 25V
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Chassis Mount
Pacáiste Gléas Soláthraithe :
SP4