BSO612CVGHUMA1 Praghsáil (USD) [210131pcs Stoc]
- 1 pcs$0.17602
- 2,500 pcs$0.16896
- Cuid Uimhir:
- BSO612CVGHUMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N/P-CH 60V 2A 8-SOIC.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Diodes - Toilleadh Athrógach (Varicaps, Varactors) ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSO612CVGHUMA1 electronic components. BSO612CVGHUMA1 can be shipped within 24 hours after order. If you have any demands for BSO612CVGHUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO612CVGHUMA1 Tréithe Táirge
Cuid Uimhir :
BSO612CVGHUMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N/P-CH 60V 2A 8-SOIC
Sraith :
SIPMOS®
Stádas Cuid :
Active
Cineál FET :
N and P-Channel
Gné FET :
Standard
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3A, 2A
Rds On (Max) @ Id, Vgs :
120 mOhm @ 3A, 10V
Vgs (ú) (Max) @ Id :
4V @ 20µA
Muirear Geata (Qg) (Max) @ Vgs :
15.5nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
340pF @ 25V
Cumhacht - Max :
2W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
PG-DSO-8
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