SIZ900DT-T1-GE3 Praghsáil (USD) [3690pcs Stoc]
- 3,000 pcs$0.33301
- Cuid Uimhir:
- SIZ900DT-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2N-CH 30V 24A POWERPAIR.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Sraith, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - Cuspóir Speisialta, Túistéirí - TRIACanna, Diodes - RF and Diodes - Rectifiers - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIZ900DT-T1-GE3 electronic components. SIZ900DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ900DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ900DT-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SIZ900DT-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2N-CH 30V 24A POWERPAIR
Sraith :
TrenchFET®
Stádas Cuid :
Obsolete
Cineál FET :
2 N-Channel (Half Bridge)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
24A, 28A
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 19.4A, 10V
Vgs (ú) (Max) @ Id :
2.4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
45nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1830pF @ 15V
Cumhacht - Max :
48W, 100W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-PowerPair™
Pacáiste Gléas Soláthraithe :
6-PowerPair™
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