Monaróir :
Rohm Semiconductor
Cur síos :
MOSFET N/P-CH 30V/20V TUMT6
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V, 20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1.4A, 1A
Rds On (Max) @ Id, Vgs :
240 mOhm @ 1.4A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
2nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
70pF @ 10V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-SMD, Flat Leads
Pacáiste Gléas Soláthraithe :
TUMT6