[3974pcs Stoc]
- Cuid Uimhir:
- SI5504DC-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N/P-CH 30V 2.9A 1206-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - JFETanna, Thyristors - SCRanna - Modúil, Diodes - RF, Diodes - Rectifiers Bridge, Thyristors - SCRanna, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI5504DC-T1-GE3 electronic components. SI5504DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5504DC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5504DC-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI5504DC-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N/P-CH 30V 2.9A 1206-8
Sraith :
TrenchFET®
Stádas Cuid :
Obsolete
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
2.9A, 2.1A
Rds On (Max) @ Id, Vgs :
85 mOhm @ 2.9A, 10V
Vgs (ú) (Max) @ Id :
1V @ 250µA (Min)
Muirear Geata (Qg) (Max) @ Vgs :
7.5nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Cumhacht - Max :
1.1W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SMD, Flat Lead
Pacáiste Gléas Soláthraithe :
1206-8 ChipFET™
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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