Cuid Uimhir :
ALD212900ASAL
Monaróir :
Advanced Linear Devices Inc.
Cur síos :
MOSFET 2N-CH 10.6V 0.08A 8SOIC
Sraith :
EPAD®, Zero Threshold™
Cineál FET :
2 N-Channel (Dual) Matched Pair
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
10.6V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
80mA
Rds On (Max) @ Id, Vgs :
14 Ohm
Vgs (ú) (Max) @ Id :
10mV @ 20µA
Muirear Geata (Qg) (Max) @ Vgs :
-
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
30pF @ 5V
Teocht Oibriúcháin :
0°C ~ 70°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SOIC