SIS903DN-T1-GE3 Praghsáil (USD) [201147pcs Stoc]
- 1 pcs$0.18388
- Cuid Uimhir:
- SIS903DN-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET DUAL P-CHAN POWERPAK 1212.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Modúil Tiomána Cumhachta, Diodes - RF, Trasraitheoirí - Cuspóir Speisialta, Transistors - FETs, MOSFETs - RF, Thyristors - SCRanna, Diodes - Rectifiers - Aonair, Trasraitheoirí - IGBTanna - Modúil and Diodes - Zener - Sraith ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIS903DN-T1-GE3 electronic components. SIS903DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS903DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS903DN-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SIS903DN-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET DUAL P-CHAN POWERPAK 1212
Sraith :
TrenchFET® Gen III
Stádas Cuid :
Active
Cineál FET :
2 P-Channel (Dual)
Gné FET :
Standard
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
20.1 mOhm @ 5A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
42nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2565pF @ 10V
Cumhacht - Max :
2.6W (Ta), 23W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
PowerPAK® 1212-8 Dual
Pacáiste Gléas Soláthraithe :
PowerPAK® 1212-8 Dual
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