DMG6602SVT-7 Praghsáil (USD) [885618pcs Stoc]
- 1 pcs$0.04176
- 3,000 pcs$0.03828
- Cuid Uimhir:
- DMG6602SVT-7
- Monaróir:
- Diodes Incorporated
- Cur síos mionsonraithe:
- MOSFET N/P-CH 30V TSOT23-6.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - FETs, MOSFETs - Eagair, Trasraitheoirí - IGBTanna - Aonair, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Túistéirí - TRIACanna, Diodes - RF, Diodes - Toilleadh Athrógach (Varicaps, Varactors) and Trasraitheoirí - IGBTanna - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Diodes Incorporated DMG6602SVT-7 electronic components. DMG6602SVT-7 can be shipped within 24 hours after order. If you have any demands for DMG6602SVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG6602SVT-7 Tréithe Táirge
Cuid Uimhir :
DMG6602SVT-7
Monaróir :
Diodes Incorporated
Cur síos :
MOSFET N/P-CH 30V TSOT23-6
Sraith :
-
Stádas Cuid :
Not For New Designs
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate, 4.5V Drive
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3.4A, 2.8A
Rds On (Max) @ Id, Vgs :
60 mOhm @ 3.1A, 10V
Vgs (ú) (Max) @ Id :
2.3V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
13nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
400pF @ 15V
Cumhacht - Max :
840mW
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
SOT-23-6 Thin, TSOT-23-6
Pacáiste Gléas Soláthraithe :
TSOT-23-6
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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