[4153pcs Stoc]
- Cuid Uimhir:
- SI5511DC-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N/P-CH 30V 4A 1206-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - Cuspóir Speisialta, Diodes - Rectifiers - Aonair, Túistéirí - DIACs, SIDACanna, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - RF and Trasraitheoirí - IGBTanna - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI5511DC-T1-GE3 electronic components. SI5511DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5511DC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5511DC-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI5511DC-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N/P-CH 30V 4A 1206-8
Sraith :
TrenchFET®
Stádas Cuid :
Obsolete
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4A, 3.6A
Rds On (Max) @ Id, Vgs :
55 mOhm @ 4.8A, 4.5V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
7.1nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
435pF @ 15V
Cumhacht - Max :
3.1W, 2.6W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SMD, Flat Lead
Pacáiste Gléas Soláthraithe :
1206-8 ChipFET™
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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