BSC150N03LDGATMA1 Praghsáil (USD) [225640pcs Stoc]
- 1 pcs$0.16392
- Cuid Uimhir:
- BSC150N03LDGATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET 2N-CH 30V 8A 8TDSON.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Transistors - FETs, MOSFETs - RF, Modúil Tiomána Cumhachta, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - Rectifiers - Aonair and Diodes - Toilleadh Athrógach (Varicaps, Varactors) ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSC150N03LDGATMA1 electronic components. BSC150N03LDGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC150N03LDGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC150N03LDGATMA1 Tréithe Táirge
Cuid Uimhir :
BSC150N03LDGATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET 2N-CH 30V 8A 8TDSON
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
15 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
2.2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
13.2nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1100pF @ 15V
Cumhacht - Max :
26W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-PowerVDFN
Pacáiste Gléas Soláthraithe :
PG-TDSON-8 Dual
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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