SIA537EDJ-T1-GE3 Praghsáil (USD) [358565pcs Stoc]
- 1 pcs$0.10315
- 3,000 pcs$0.09744
- Cuid Uimhir:
- SIA537EDJ-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N/P-CH 12V/20V SC-70-6L.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - IGBTanna - Eagair, Thyristors - SCRanna, Diodes - RF, Trasraitheoirí - IGBTanna - Modúil, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - Cuspóir Speisialta and Diodes - Rectifiers - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIA537EDJ-T1-GE3 electronic components. SIA537EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA537EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA537EDJ-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SIA537EDJ-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N/P-CH 12V/20V SC-70-6L
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
12V, 20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4.5A
Rds On (Max) @ Id, Vgs :
28 mOhm @ 5.2A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
16nC @ 8V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
455pF @ 6V
Cumhacht - Max :
7.8W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
PowerPAK® SC-70-6 Dual
Pacáiste Gléas Soláthraithe :
PowerPAK® SC-70-6 Dual
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